》  Research Fields

Optoelectronic devices (Si-based GaAs/InP lasers, GaAs/InP photodetectors, GaN-based lasers, photodetectors, etc.)

》  Professional Experience

• 03/2023 – Present, Associate Professor, Tongji University, China.

• 03/2020 – 02/2023, Experienced Researcher (Marie Curie Research Fellow), IBM Research GmbH, Switzerland.

• 01/2019 – 02/2020, Associate Researcher, Nano Devices and Materials Division, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Science (CAS), China.

• 10/2018 – 12/2018, Assistant Researcher, Nano Devices and Materials Division, SINANO, CAS, China.

• 08/2016 – 09/2018, Postdoc, Nano Devices and Materials Division, SINANO, CAS, China.

》  Education

• 09/2011 – 07/2016, Ph.D., University of Chinese Academy of Sciences (UCAS). Majoring in Microelectronics and solid-state electronics; thesis title – Study on Reliability of GaN-based Laser Diodes.

》  Award

• Marie Sklodowska-Curie Fellow (2020)

• Excellent Postdoctoral Fellowship from CPSF-CAS (2016)

• Outstanding PhD Graduate of University of Chinese Academy of Sciences (2016)

》  Approved Research Projects

• Defect Analysis and Thermal Effects of Nanolasers and Emitters, H2020 Marie Sklodowska-Curie Action Individual Fellowship (No. 844541), € ~20 3149.44, 2020-2022. (PI)

• GaN-based Laser Characterization and Reliability, 2018 Key technology research on Three-color laser diode online detection and aging technology, National Key Research and Development Program of China (No. 2018YFB0406905), ￥4,600,000, 2018-2020. (PI)

• Active Region Degradation and Stress Induced Defect Analysis in GaN-based Laser Didoes, National Natural Science Foundation of China (No. 61704184), ￥250 000, 2017-2019. (PI)

• Stress-induced Defect Analysis in Active Region of GaN-based laser diodes, Natural Science Foundation of Jiangsu Province (No. BK20170430), ￥200 000, 2017-2019. (PI)

• Degradation of High Power GaN-based Blue Laser Didoes, CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows (No. 2016LH0026), ￥200 000 (€ ~25 000), 2016-2018. (PI)

》  Academic Services

• Guest Editor of Optical and Quantum Electronics

• Program Committee of International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

• Reviewer of Optics Express, OSA Continuum, etc.

》  Publications

1. P. Wen, P. Tiwari, S. Mauthe, H. Schmid, M. Sousa, M. Scherrer, M. Baumann, B. I. Bitachon, J. Leuthold, B. Gotsmann and K. E. Moselund, Waveguide coupled III-V photodiodes monolithically integrated on Si, Nature Communications, 13, 909, 2022.

2. P. Wen, P. Tiwari, M. Scherrer, E. Lorster, B. Gotsmann and K. E. Moselund, Thermal simulation and experimental analysis of InP-on-Si micro- and nanocavity lasers, ACS Photonics, 9, 1338-48, 2022.

3. Q. Ding, P. Wen, B. Gotsmann, K. E. Moselund and A. Schenk, Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode, SPIE Photonics Europe, Strasbourg, France, 12148, 12148OE, 2022.

4. P. Xu, H. Xiu, L. Yin, P. Wen, Y. Xue and J. Yang, The effect of humidity on the degradation mechanisms of GaN-based green laser diodes, Optics & Laser Technology, 157, 108662, 2022.

5. P. Wen, P. Tiwari, K. E. Moselund and B. Gotsmann, Thermal and optical simulation of InP on Si nanocavity lasers, 21st International Conference on Numerical simulation of Optoelectronic Devices (NUSOD), 52207, 9541426, 2021.

6. P. Wen, P. Tiwari, B. Gotsmann and K. E. Moselund, Modelling of thermal effects in InP-on-Si nanocavity lasers, IEEE 17^th International Conference on Group IV Photonics(GFP), 51802, 9673942, 2021.

7. P. Tiwari, P. Wen, D. Caimi, S. Mauthe, N. V. Trivino, M. Sousa and K. E. Moselund, Scaling of Metal-Clad InP Nanodisk Lasers: Optical Performance and Thermal Effects, Optics Express, 29, 3915-27, 2021.

8. P. Tiwari, P. Wen, S. Mauthe, M. Baumann, B. I. Bitachon, H. Schmid, J. Leuthold and K. E. Moselund, Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK, Optical Fiber Communications Conference and Exhibition (OFC), 9490006, 2021.

9. M. Scherrer, P. Tiwari, N. V. Trivino, S. Mauthe, P. Wen, H. Schmid and K. E. Moselund, Monolithic integration of in-plane hybrid III-V/Si photonic devices, MikroSystemTechnik, Congress, 2021.

10. H. Xiu, P. Xu, P. Wen, Y. Zhang and J. Yang, Rapid degradation of InGaN/GaN green laser diodes, Superlattices and Microstructures, 142, 106517, 2020.

11. Y. Tang, M. Feng, P. Wen, J. Liu, J. Wang, X, Sun, Q. Sun, S. Zhang, X. Sheng, M. Ikeda and H. Yang, Degradation study of InGaN-based laser diodes grown on Si, Journal of Physics D: Applied Physics, 53, 39, 2020.

12. H. Lin, D. Li, L, Zhang, P. Wen, S. Zhang, J. Liu and H. Yang, Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes, Journal of Semiconductors, 41, 102104, 2020.

13. P. Tiwari, S. Mauthe, N. V. Triviño, P. Wen, Y. Baumgartner, M. Scherrer, D. Caimi, S. Reidt and K. E. Moselund, Metal-Clad InP Cavities for Nanolasers on Si, IEEE Photonics Conference (IPC), 47351, 9252274, 2020.

14. N. Vico Triviño, S. Mauthe, M. Scherrer, P. Tiwari, P. Wen, M. Sousa, H. Schmid and K. E. Moselund, In-plane monolithic integration of scaled III-V photonic devices, European Conference on Optical Communications (ECOC), 48923, 9333303, 2020.

15. P. Tiwari, S. Mauthe, N. V. Trivino, P. Staudinger, M. Scherrer, P. Wen, D. Caimi, M. Sousa, H. Schmid and K. E. Moselund, Q. Ding and A. Schenk, Scaled III-V optoelectronic devices on silicon, International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 49422, 9217747, 2020.

16. P. Wen, H. Xiu, S. Zhang, J. Liu, L. Zhang, A. Tian, F. Zhang, R. Zhou, D. Li, M. Ikeda, W. Zhou and H. Yang, Strain-related degradation of GaN-based blue laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, 25, 2947602, 2019.

17. R. Zhou, M. Ikeda, F. Zhang, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells, Japanese Journal of Applied Physics, 127, 013103, 2019.

18. F. Zhang, M. Ikeda, R. Zhou, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Polarization relaxation in InGaN/(In)GaN multiple quantum wells, Japanese Journal of Applied Physics, 58, SCCB12, 2019.

19. R. Zhou, M. Ikeda, F. Zhang, J. Liu, S. Zhang, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence, Japanese Journal of Applied Physics, 58, SCCB07, 2019.

20. M. Ikeda, F. Zhang, R. Zhou, J. Liu, S. Zhang, A. Tian, P. Wen, L. Zhang, D. Li and H. Yang, Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells, Japanese Journal of Applied Physics, 58, SCCB03, 2019.

21. J. Hu, S. Zhang, D. Li, F. Zhang, M. Feng, P. Wen, J. Liu, L. Zhang and H. Yang, Thermal analysis of GaN-based laser diode mini-array, Chinese Physics B, 27, 094208, 2018.

22. P. Wen, J. Liu, S. Zhang, L. Zhang, M. Ikeda, D. Li, A. Tian, F. Zhang, Y. Cheng, W. Zhou and H. Yang, Asymmetrical quantum well degradation of InGaN/GaN blue laser diodes characterized by photoluminescence, Applied Physics Letters, 111, 212102, 2017.

23. F. Zhang, M. Ikeda, S. Zhang, J. Liu, A. Tian, P. Wen, Y. Cheng and H. Yang, Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures, Journal of Crystal Growth, 475, 93-9, 2017.

24. A. Tian, J. Liu, L. Zhang, L. Jiang, M. Ikeda, S. Zhang, D. Li, P. Wen, Y. Cheng, X. Fan and H. Yang, Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth, Applied Physics Letters, 111, 112102, 2017.

25. A. Tian, J. Liu, L. Zhang, Z. Li, M. Ikeda, S. Zhang, D. Li, P. Wen, F. Zhang, Y. Cheng, X. Fan and H. Yang, Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region, Optics Express, 25, 415, 2017.

26. X. Fan, J. Liu, F. Zhang, M. Ikeda, D. Li, S. Zhang, L. Zhang, A. Tian, P. Wen, G. Ma and H. Yang, Effect of droop phenomenon in InGaN/GaN blue laser diodes on threshold current, Chinese Physics Letters, 34, 109-11, 2017.

27. Y. Cheng, J. Liu, L. Zhang, D. Jiang, A. Tian, F. Zhang, M. Feng, P. Wen, W. Zhou, S. Zhang, M. Ikeda, D. Li and H. Yang, Suppression of recombination in waveguide in c-plane InGaN-based green laser diodes, Superlattices and Microstructures, 111, 1121-5, 2017.

28. P. Wen, S. Zhang, J. Liu, D. Li, L. Zhang, Q. Sun, A. Tian, K. Zhou, T. Zhou and H. Yang, Investigation of InGaN/GaN laser degradation based on luminescence properties, Journal of Applied Physics, 119, 213107, 2016.

29. P. Wen, S. Zhang, J. Liu, D. Li, L. Zhang, K. Zhou, X. Su, A. Tian, F. Zhang and H. Yang, Catastrophic degradation of InGaN/GaN blue laser diodes, IEEE Transactions on Device and Materials Reliability, 16, 638-41, 2016.

30. P. Wen, S. Zhang, D. Li, J. Liu, L. Zhang, D. Shi, K. Zhou, A. Tian, S. Feng and H. Yang, Investigation of rapid degradation in GaN-based blue laser diodes, Superlattices and Microstructures, 99, 72-6, 2016.

31. Y. Huang, P. Wen, D. Li, J. Liu, S. Zhang, L. Zhang and H. Yang, Investigation of output nonlinearity mechanisms in GaN-based blue laser diodes, 13th China International Forum on Solid State Lighting, 978, 16579860, 2016.

32. F. Zhang, M. Ikeda, S. Zhang, J. Liu, A. Tian, P. Wen, Y. Cheng and H. Yang, Reduction of polarization field strength in fully strained c-plane InGaN/(In)GaN multiple quantum wells grown by MOCVD, Nanoscale Research Letters, 11, 519, 2016.

33. A. Tian, J. Liu, L. Zhang, M. Ikeda, X. Fan, S. Zhang, D. Li, F. Zhang, P. Wen, Y. Cheng and H. Yang, Optical characterization of InGaN/GaN quantum well active region of green laser diodes, Applied Physics Express, 10, 012701, 2016.

34. A. Tian, J. Liu, L. Zhang, M. Ikeda, S. Zhang, D. Li, X. Fan, K. Zhou, P. Wen, F. Zhang and H. Yang, Green laser diodes with low operation voltage obtained by suppressing carbon impurity in AlGaN : Mg cladding layer, Physics Status Solidi C, 13, 245-7, 2016.

35. P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, A. Tian, F. Zhang, C. Zeng and H. Yang, Identification of degradation mechanisms based on thermal characteristics of InGaN/GaN laser diodes, IEEE Journal of Selected Topics in Quantum Electronics, 21, 165-70, 2015.

36. P. Wen, S. Zhang, D. Li, J. Liu, L. Zhang, D. Shi, K. Zhou, A. Tian, S. Feng and H. Yang, Identification of degradation mechanisms of blue InGaN/GaN laser diodes, Journal of Physics D: Applied Physics, 48, 415101, 2015.

37. P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, Z. Li, A. Tian and H. Yang,  Enhanced temperature characteristic of InGaN/GaN laser diodes with uniform multiple quantum wells, Semiconductor Science and Technology, 30, 125015, 2015.

38. P. Wen, D. Li, S. Zhang, J. Liu, L. Zhang, K. Zhou, M. Feng, Z. Li, A. Tian and H. Yang, High accuracy thermal resistance measurement in GaN/InGaN laser diodes, Solid-State Electronics, 106, 50-3, 2015.

39. D. Shi, S. Feng, Y. Qiao and P. Wen, The research on temperature distribution of GaN-based blue laser diode, Solid-State Electronics, 109, 25-8, 2015.

40. A. Tian, J. Liu, M. Ikeda, S. Zhang, Z. Li, M. Feng, K. Zhou, D. Li, L. Zhang, P. Wen, F. Zhang and H. Yang, Conductivity enhancement in AlGaN: Mg by suppressing the incorporation of carbon impurity, Applied Physics Express, 8, 051001, 2015.

41. K. Zhou, M. Ikeda, J. Liu, S. Zhang, Z. Li, M. Feng, A. Tian, P. Wen, D. Li, L. Zhang and H. Yang, Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition, Journal of Crystal Growth, 409, 51-5, 2015.